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regarding the change of names mentioned in the document, such as hitachi electric and hitachi xx, to renesas technology corp. the semiconductor operations of mitsubishi electric and hitachi were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although hitachi, hitachi, ltd., hitachi semiconductors, and other hitachi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. renesas technology home page: http://www.renesas.com renesas technology corp. customer support dept. april 1, 2003 to all our customers
cautions keep safety first in your circuit designs! 1. renesas technology corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas technology corporation or a third party. 2. renesas technology corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by renesas technology corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact renesas technology corporation or an authorized renesas technology corporation product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by renesas technology corporation by various means, including the renesas technology corporation semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact renesas technology corporation or an authorized renesas technology corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corporation is necessary to reprint or reproduce in whole or in part these materials. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. 8. please contact renesas technology corporation for further details on these materials or the products contained therein.
6AM12 silicon n-channel/p-channel complementary power mos fet array ade-208-1216 (z) 1st. edition mar. 2001 application high speed power switching features low on-resistance n-channel: r ds(on) 0.17 , v gs = 10 v, i d = 4 a p-channel: r ds(on) 0.2 , v gs = ?0 v, i d = ? a capable of 4 v gate drive low drive current high speed switching high density mounting suitable for h-bridged motor driver
6AM12 2 outline sp-12ta 1. 2, 8, 9 3, 7, 10. 4, 6, 11. 5, 12. 1 2 3 4 5 6 7 8 9 11 10 12 5 s 12 s 11 g 6 g 9 g 8 g s 1 4 g pch nch 2 g d 10 d 7 d 3 n-ch source n-ch gate n-ch drain p-ch drain p-ch gate p-ch source absolute maximum ratings (ta = 25?) ratings item symbol nch pch unit drain to source voltage v dss 60 ?0 v gate to source voltage v gss ?0 ?0 v drain current i d 77 a drain peak current i d(pulse) * 1 28 ?8 a body to drain diode reverse drain current i dr 77 a channel dissipation pch (tc = 25?)* 2 42 w channel dissipation pch* 2 4.8 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? notes: 1. pw 10 ?, duty cycle 1% 2. 6 devices operation
6AM12 3 electrical characteristics (ta = 25?) (1 unit) n channel p channel item symbol min typ max min typ max unit test conditions drain to source breakdown voltage v (br)dss 60 ?0 v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss ?0 ?0 v i g = ?00 ?, v ds = 0 gate to source leak current i gss ?0 ?0 ? v gs = ?6 v, v ds = 0 zero gate voltage drain current i dss 250 ?50 ? v ds = 50 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 2.0 ?.0 ?.0 v i d = 1 ma, v ds = 10 v static drain to source r ds(on) 0.13 0.17 0.15 0.2 i d = 4 a, v gs = 10 v* 1 on state resistance 0.19 0.24 0.20 0.27 i d = 4 a, v gs = 4 v* 1 forward transfer admittance |y fs | 3.5 5.5 3.5 6.0 s i d = 4 a, v ds = 10 v* 1 input capacitance ciss 400 900 pf v ds = 10 v, v gs = 0 output capacitance coss 220 460 pf f = 1 mhz reverse transfer capacitance crss 60 130 pf turn-on delay time t d(on) 5 8 ns i d = 4 a, v gs = 10 v, rise time t r ?5 ?0 nsr l = 7.5 turn-off delay time t d(off) 150 170 ns fall time t f ?0 ?5 ns body to drain diode forward voltage v df 1.1 ?.05 v i f = 7 a, v gs = 0 body to drain diode reverse recovery time t rr 110 180 ns i f = 7 a, v gs = 0, dif/dt = 50 a/? note: 1. pulse test polarity of test conditions for p channel device is reversed.
6AM12 4 6 5 4 3 2 1 0 25 50 75 100 125 150 ambient temperature ta (?) channel dissipation pch (w) 6 device operation condition : channel dissipation of each die is identical 4 device operation 2 device operation 1 device operation maximum channel dissipation curve 60 40 20 0 25 50 75 100 125 150 case temperature tc (?) channel dissipation pch (w) condition : channel dissipation of each die is identical 6 device operation 4 device operation 2 device operation 1 device operation maximum channel dissipation curve ?50 ?30 ?10 ?3 ?1 ?0.3 ?0.1 ?0.05 ?0.1 ?0.3 ?1 3 10 ?30 ?100 drain to source voltage v (v) ds drain current i (a) d 1 ms pw = 10 ms (1 shot) dc operation (tc = 25?) ta = 25? operation in this area is limited by r (on) ds 10 s m 100 s m maximum safe operation area (p-channel) e20 e8 e20 drain to source voltage v ds (v) typical output characteristics e16 e4 e4 e12 e16 pulse test 0 e8 e12 e4 v e3.5 v v gs = e2.5 v e5 v e10 v e3 v drain current i d (a) e7 v e4.5 v
6AM12 5 ?0 ? ? gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics ? ? ? ? ? ?5? 0 ? ? v ds = ?0 v pulse test 75? t c = 25? ?.0 ? ?0 gate to source voltage v gs (v) drain to source saturation voltage v ds (on) (v) ?.6 ?.4 ? ? ? 0 ?.8 ?.2 drain to source saturation voltage vs. gate to source voltage ? a i d = ?0 a pulse test ? a 5 ? ?0 drain current i d (a) static drain to source on state resistance r ds (on) ( w ) 2 0.1 e1.0 e5 e20 e0.5 0.5 1.0 static drain to source on state resistance vs. drain current 0.2 0.05 e10 e10 v v gs = e4 v pulse test 0.5 40 160 case temperature t c (?c) static drain to source on state resistance r ds (on) ( w ) 0.4 0.1 0 80 120 0 0.2 0.3 static drain to source on state resistance vs. temperature i d = e10 a pulse test e5 a e2 a e10 a e5 a e2 a e40 v gs = e4 v v gs = e10 v
6AM12 6 50 ?.5 ?0 drain current i d (a) forward transfer admittance ? yfs ? (s) 20 2 e0.2 e1.0 e5 0.5 5 10 forward transfer admittance vs. drain current t c = 25?c v gs = 10 v pulse test e0.1 1.0 e2 e25?c 75?c 500 e1.0 e20 reverse drain current i dr (a) reverse recovery time t rr (ns) 200 20 e0.5 e2 e10 5 50 100 body to drain diode reverse recovery time di/dt = 50 a/ m s, ta = 25?c v gs = 0 pulse test e0.2 10 e5 10,000 e20 e50 drain to source voltage v ds (v) capacitance c (pf) 100 e10 e30 e40 10 1,000 typical capacitance vs. drain to source voltage 0 crss coss ciss v gs = 0 f = 1 mhz 0 40 100 gate charge qg (nc) drain to source voltage v ds (v) dynamic input characteristics e20 e80 20 06080 e100 e60 e40 v ds e10 v 0 e4 e16 e20 e12 e8 v dd = e10 v e50 v e25 v i d = e10 a e25 v v dd = e50 v v gs gate to source voltage v gs (v)
6AM12 7 500 ?.0 ?0 drain current i d (a) switching time t (ns) 200 20 ?.5 ? ?0 5 50 100 ?.2 10 ? switching characteristics t f t d (on) t r pw = 10 m s, v gs = e10 v duty < 1% v dd 30v t d (off) = . . e20 e0.8 e2.0 source to drain voltage v sd (v) reverse drain current i dr (a) e16 e0.4 e1.2 e1.6 e8 e12 reverse drain current vs. source to drain voltage pulse test 0 e4 e5 v v gs = 0, 5 v e10 v
6AM12 8 50 30 10 3 1 0.3 0.1 0.05 0.1 0.3 1 3 10 30 100 drain to source voltage v (v) ds drain current i (a) d 1 ms pw = 10 ms (1 shot) dc operation (tc = 25?) ta = 25? operation in this area is limited by r (on) ds 10 s m 100 s m maximum safe operation area (n-channel) typical output characteristics 6 drain to source voltage v ds (v) 8 4 2 10 drain current i d (a) v gs = 2.0 v pulse test 10 v 4 v 5 v 3.5 v 3.0 v 2.5 v 0 2 4 6 8 0 10 typical transfer characteristics 3 gate to source voltage v gs (v) 4 2 1.0 05 2 4 6 8 10 0 drain current i d (a) t c = 25?c 75?c v ds = 10 v pulse test e25?c drain to source saturation voltage v ds (on) (v) drain to source saturation voltage vs. gate to source voltage 6 gate to source voltage v gs (v) 8 4 2 010 0.8 1.2 1.6 2.0 0 0.4 pulse test i d = 2 a 5 a 10 a
6AM12 9 5 drain current i d (a) 10 2 1.0 50 0.05 0.1 0.2 0.5 1.0 0.5 0.02 0.01 20 static drain to source on state resistance vs. drain current static drain to source on state resistance r ds (on) ( w ) v gs = 4 v 10 v pulse test 40 case temperature t c (?c) 80 0 e40 160 0.1 0.2 0.3 0.4 0.5 0 120 static drain to source on state resistance vs. temperature static drain to source on state resistance r ds (on) ( w ) i d = 10 a 5 a 2 a 2 a 5 a 10 a pulse test v gs = 4 v v gs = 10 v forward transfer admittance vs. drain current 50 20 10 5 2 1.0 0.5 0.1 0.2 0.5 1.0 2 10 drain current i d (a) 5 forward transfer admittance ? yfs ? (s) t c = 25?c v ds = 10 v pulse test e25?c 75?c reverse recovery time t rr (ns) 500 200 100 50 20 10 5 0.5 1.0 5 50 reverse drain current i dr (a) 10 2 20 body to drain diode reverse recovery time di/dt = 50 a/ m s, ta = 25?c v gs = 0 pulse test
6AM12 10 typical capacitance vs. drain to source voltage 10000 3000 1000 300 30 10 capacitance c (pf) 01020 50 drain to source voltage v ds (v) 30 100 40 v gs = 0 f =1mhz ciss coss crss 100 80 60 40 20 04 12 16 gate charge qg (nc) 8 20 16 12 8 4 0 dynamic input characteristics drain to source voltage v ds (v) gate to source voltage v gs (v) 20 i d = 10 a v ds v gs v dd = 50 v 25 v 10 v 25 v 10 v v dd = 50 v switching characteristics switching time t (ns) 500 200 100 50 20 10 5 0.1 0.2 0.5 1.0 2 10 drain current i d (a) 5 t d (off) t f t r t d (on) v gs = 10 v v dd = 30 v pw = 2 m s, duty < 1 % 20 16 12 8 4 0 0.4 1.2 1.6 2.0 source to drain voltage v sd (v) 0.8 reverse drain current vs. source to drain voltage reverse drain current i dr (a) v gs = 0, e 5 v pulse test 10 v 15 v 5 v
6AM12 11 package dimensions hitachi code jedec eiaj mass (reference value) sp-12ta 6.1 g 31.3 24.4 0.1 16.4 0.3 +0.2 e0.3 3.8 3.2 f 2.54 1.4 0.85 0.1 2.2 0.2 0.55 +0.1 e0.06 5.0 0.2 2.0 0.1 10.0 0.3 2.7 3.2 3.0 16.0 0.3 10.5 0.5 123456789101112 as of january, 2001 unit: mm
6AM12 12 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0

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